Lu, A.; Lin, J.; Tamura, R.; Futamura, Y., Sakurai, T., Miyazaki, T. Extraction of local structure differences in Silica based on unsupervised learning. Phys. Chem. Chem.
Phys., 26, 11657 (2024)
Zanaeva, E.; Lu, A., Louzguine-Luzguin, D. On atomic segregation in metallic glasses induced by shear deformation: A computer
simulation study. Comput.
Mater. Sci., 238, 112923 (2024)
Nishio, K.; Lu, A. Unveiling a medium-range structural commonality of amorphous alloys. J. Non-Cryst.
Solids, 624, 122696 (2023)
Lu, A.; Louzguine-Luzgin, D. Crystal nucleation and growth processes in Cu-rich glass-forming Cu–Zr alloys. J. Chem. Phys., 157, 014506 (2022)
Okada, M.; Nagamura, N.; Matsumura, T.; Ando, Y.; Lu, A.; Okada, N.; Chang,
W.-H.; Nakanishi, T.; Shimizu, T.; Kubo, T.; Irisawa, T.; Yamada, T. Growth of MoS2-Nb-doped MoS2 lateral homojunctions: a monolayer p-n
diode by substitutional doping. APL Mater., 9, 121115 (2021)
Yayama, T.; Lu, A.; Morishita, T., Nakanishi, T. First-principles study of two-dimensional gallium-nitrides on van der Waals epitaxial
substrate. Appl. Phys. Lett., 119, 203101
(2021)
Nishio, K.; Lu, A. Can every substance exist as an amorphous solid? J. Non-Cryst. Solids, 576, 121254
(2021)
Louzguine-Luzgin, D. V.; Trifonov, A.S.; Ivanov, Y. P.; Lu, A.; Lubenchenko, A.
V.; Greer, A. L. Shear-induced chemical segregation in a Fe-based bulk metallic glass at room
temperature. Sci. Rep., 11, 13650 (2021)
Lu, A.; Nishio, K.; Morishita, T.; Ohara, K.; Lu, Z.; Hirata, A. Frank-Kasper Z16 local structures in Cu-Zr metallic glasses. Phys. Rev. B,
102, 184201 (2020)
Lu, A.; Yayama, T.; Morishita, T.; Nakanishi, T. On Hydrogenated Bilayer GaN: New Stable Structures Along the c-plane, m-plane or
a-plane. J. Phys. Chem. C, 124 (31),
16888-16894 (2020)
Nishio, K.; Lu, A.; Miyazaki, T. Universal short-range order and material dependent glass-forming ability of metallic liquids
and glasses. Phys.
Rev. Research, 1, 012013 (2019)
Yayama, T.; Lu, A.; Morishita, T.; Nakanishi, T. First-principles molecular dynamics study of two-dimensional bilayer GaN: structure,
electronic properties and temperature effect. Jpn. J. Appl. Phys.,
58, SCCB35 (2019)
Houssa, M.; Iordanidou, K.; Dabral, A.; Lu, A.; Meng, R.; Pourtois, G.;
Afanas’ev, V.; Stesmans, A. Contact Resistance at graphene/MoS2 lateral heterojunctions. Appl. Phys. Lett., 114, 163101
(2019)
Houssa, M.; Iordanidou, K.; Dabral, A.; Lu, A.; Pourtois, G.; Afanas’ev, V.;
Stesmans, A. Contact resistance at MoS2-based 2D metal/semiconductor lateral
heterojunctions. ACS Appl. Nano Mater., 2(2),
760-766 (2019)
Nishio, K.; Lu, A.; Miyazaki, T. Entropy-driven docosahedral short-range order in simple liquids and glasses. Phys. Rev. E, 99,
022121 (2019)
Lu, A.; Yayama, T.; Morishita, T.; Spencer, M.; Nakanishi, T. Uncovering new buckled structures of bilayer GaN: a first-principles study. J. Phys. Chem. C, 123(3),
1939-1947 (2019)
Dabral, A.; Lu, A.; Chiappe, D.; Houssa, M.; Pourtois, G. A systematic study of various 2D materials in the light of defect formation and
oxidation. Phys. Chem. Chem.
Phys., 21, 1089-1099 (2019)
Verreck, D.; Arutchelvan, G.; Lockhart de la Rosa, C.; Leonhardt, A.; Chiappe, D.; Lu,
A.; Pourtois, G.; Matagne, P.; Heyns, M.; de Gendt, S.; Mocuta, A.; Radu, I. The role of nonidealities in the scaling of MoS2 FETs. IEEE Trans. Electron Devices,
65(10), 4635-4640 (2018)
Dabral, A.; Pourtois, G.; Sankaran, K.; Magnus, W.; Yu, H.; de Jamblinne de Meux, A.;
Lu, A.; Clima, S.; Stokbro, K.; Schaekers, M.; Collaert, N.; Horiguchi, N.;
Houssa, M. Study of the intrinsic limitations of the contact resistance of metal/semiconductor
interfaces through atomistic simulations. ECS J. Solid State Sci.
Technol., 7(6), N77-N80 (2018)
Balaji, Y.; Smets, Q.; Lockhart de la Rosa, C.; Lu, A.; Chiappe, D.; Agarwal,
T.; Lin, D.; Huyghebaert, C.; Radu, I.; Mocuta, D.; Groeseneken, G. Tunneling transistors based on MoS2/MoTe2 van der Waals
heterostructures. IEEE J-EDS, 6, 1048-1055 (2018)
Lu, A.; Houssa, M.; Luisier, M.; Pourtois, G. Impact of layer alignment on the behavior of MoS2|ZrS2 tunnel field
effect transistors: An ab-initio study. Phys.
Rev. Appl., 8, 034017 (2017)
Lu, A.; Houssa, M.; Radu, I. P.; Pourtois G. Towards an understanding of the electric field-induced electrostatic doping in Van der Waals
heterostructures: a first-principles study. ACS Appl. Mater. Interfaces,
9, 7725-7734 (2017)
Lu, A.; Pourtois, G.; Luisier, M.; Radu, I. P.; Houssa, M. On the electrostatic control achieved in transistors based on MoS2: An ab initio
study. J. Appl. Phys., 121, 044505
(2017)
Lu, A.; Pourtois, G.; Agarwal, T.; Afzalian, A.; Radu, I. P.; Houssa, M. Origin of the performances degradation of two-dimensional-based metal-oxide-semiconductor
field effect transistors in the sub-10 nm regime: A first-principles study. Appl. Phys.
Lett., 108(4), 043504 (2016)
van den Broek, B.; Houssa, M.; Lu, A.; Pourtois, G.; Afanas’ev, V.; Stesmans,
A. Silicene nanoribbons on transition metal dichalcogenides substrates: effects on electronic
structure and ballistic transport. Nano Res., 9(11),
3394-3406 (2016)
Houssa, M.; van den Broek, B.; Iordanidou, K.; Lu, A.; Pourtois, G.; Locquet,
J-P.; Afanas’ev, V.; Stesmans, A. Topological to trivial insulating phase transition in stanene. Nano Res.,
9(3),774-778 (2016)
Nishio, K.; Lu, A.; Pourtois, G. Low-strain Si/O superlattices with tunable electronic properties: Ab initio
calculations. Phys. Rev. B,
91(16), 165303 (2015)
Conference contributions
Lu, A.; Lin, J.; Tamura, R.; Futamura, Y., Sakurai, T., Miyazaki, T. Study of the structure of silica using locally averaged atomic fingerprints and two-step
locality-preserving projections. The
Physical Society of Japan 2024 Spring Meeting (2024)
Lu, A.; Yayama, T.; Morishita, T.; Nakanishi, T. Study of 2D GaN: New bilayer structures displaying buckling and their properties. Computational Sciences
Workshop 2019 (2019)
Lu, A.; Yayama, T.; Morishita, T.; Nakanishi, T. Uncovering new structures of bilayer GaN and their properties. 第32回 分子シミュレーション討論会
(2018)
Lu, A.; Yayama, T.; Morishita, T.; Nakanishi, T. New buckled structures of bilayer GaN and their properties.
International Conference on Solid State Devices and Materials (2018)
Lu, A.; Houssa, M.; Luisier, M.; Pourtois, G. First-principles study of the electronic and transport properties of van der Waals
heterostructures. APS March Meeting (2018)
Lu, A.; Pourtois, G.; Stokbro, K.; Thean, A.; Radu, I. P.; Houssa M. First-principles study of the performance degradation of 2D channel-based transistors with
sub-10 nm gate lengths.
IEEE Semiconductor Interface Specialists Conference (2015)
Other
Idzuchi, H.; Llacsahuanga Allcca, A.E.; Lu, A.; Saito, M.; Houssa, M.; Meng,
R.; Inoue, K.; Pan, X.-C.; Tanigaki, K.; Ikuhara, Y.; Nakanishi, T.; Chen, Y. P. Enhanced ferromagnetism in artificially stretched lattice in quasi two-dimensional
Cr2Ge2Te6 arXiv: 2306.08962