Publications

Papers

  1. Nishio, K.; Lu, A.; Miyazaki, T.
    Universal short-range order and material dependent glass-forming ability of metallic liquids and glasses.
    Phys. Rev. Research, 1, 012013 (2019)
  2. Yayama, T.; Lu, A.; Morishita, T.; Nakanishi, T.
    First-principles molecular dynamics study of two-dimensional bilayer GaN: structure, electronic properties and temperature effect.
    Jpn. J. Appl. Phys., 58, SCCB35 (2019)
  3. Houssa, M.; Iordanidou, K.; Dabral, A.; Lu, A.; Meng, R.; Pourtois, G.; Afanas’ev, V.; Stesmans, A.
    Contact Resistance at graphene/MoS2 lateral heterojunctions.
    Appl. Phys. Lett., 114, 163101 (2019)
  4. Houssa, M.; Iordanidou, K.; Dabral, A.; Lu, A.; Pourtois, G.; Afanas’ev, V.; Stesmans, A.
    Contact resistance at MoS2-based 2D metal/semiconductor lateral heterojunctions.
    ACS Appl. Nano Mater., 2(2), 760-766 (2019)
  5. Nishio, K.; Lu, A.; Miyazaki, T.
    Entropy-driven docosahedral short-range order in simple liquids and glasses.
    Phys. Rev. E, 99, 022121 (2019)
  6. Lu, A.; Yayama, T.; Morishita, T.; Spencer, M.; Nakanishi, T.
    Uncovering new buckled structures of bilayer GaN: a first-principles study.
    J. Phys. Chem. C, 123(3), 1939-1947 (2019)
  7. Dabral, A.; Lu, A.; Chiappe, D.; Houssa, M.; Pourtois, G.
    A systematic study of various 2D materials in the light of defect formation and oxidation.
    Phys. Chem. Chem. Phys., 21, 1089-1099 (2019)
  8. Verreck, D.; Arutchelvan, G.; Lockhart de la Rosa, C.; Leonhardt, A.; Chiappe, D.; Lu, A.; Pourtois, G.; Matagne, P.; Heyns, M.; de Gendt, S.; Mocuta, A.; Radu, I.
    The role of nonidealities in the scaling of MoS2 FETs.
    IEEE Trans. Electron Devices, 65(10), 4635-4640 (2018)
  9. Dabral, A.; Pourtois, G.; Sankaran, K.; Magnus, W.; Yu, H.; de Jamblinne de Meux, A.; Lu, A.; Clima, S.; Stokbro, K.; Schaekers, M.; Collaert, N.; Horiguchi, N.; Houssa, M.
    Study of the intrinsic limitations of the contact resistance of metal/semiconductor interfaces through atomistic simulations.
    ECS J. Solid State Sci. Technol., 7(6), N77-N80 (2018)
  10. Balaji, Y.; Smets, Q.; Lockhart de la Rosa, C.; Lu, A.; Chiappe, D.; Agarwal, T.; Lin, D.; Huyghebaert, C.; Radu, I.; Mocuta, D.; Groeseneken, G.
    Tunneling transistors based on MoS2/MoTe2 van der Waals heterostructures.
    IEEE J-EDS, 6, 1048-1055 (2018)
  11. Lu, A.; Pourtois, G.; Luisier, M.; Radu, I. P.; Houssa, M.
    Impact of layer alignment on the behavior of MoS2|ZrS2 tunnel field effect transistors: An ab-initio study.
    Phys. Rev. Appl., 8, 034017 (2017)
  12. Lu, A.; Houssa, M.; Radu, I. P.; Pourtois G.
    Towards an understanding of the electric field-induced electrostatic doping in Van der Waals heterostructures: a first-principles study.
    ACS Appl. Mater. Interfaces, 9, 7725-7734 (2017)
  13. Lu, A.; Pourtois, G.; Luisier, M.; Radu, I. P.; Houssa, M.
    On the electrostatic control achieved in transistors based on MoS2: An ab initio study.
    J. Appl. Phys., 121, 044505 (2017)
  14. Lu, A.; Pourtois, G.; Agarwal, T.; Afzalian, A.; Radu, I. P.; Houssa, M.
    Origin of the performances degradation of two-dimensional-based metal-oxide-semiconductor field effect transistors in the sub-10 nm regime: A first-principles study.
    Appl. Phys. Lett., 108(4), 043504 (2016)
  15. van den Broek, B.; Houssa, M.; Lu, A.; Pourtois, G.; Afanas’ev, V.; Stesmans, A.
    Silicene nanoribbons on transition metal dichalcogenides substrates: effects on electronic structure and ballistic transport.
    Nano Res., 9(11), 3394-3406 (2016)
  16. Houssa, M.; van den Broek, B.; Iordanidou, K.; Lu, A.; Pourtois, G.; Locquet, J-P.; Afanas’ev, V.; Stesmans, A.
    Topological to trivial insulating phase transition in stanene.
    Nano Res., 9(3),1-5 (2016)
  17. Nishio, K.; Lu, A.; Pourtois, G.
    Low-strain Si/O superlattices with tunable electronic properties: Ab initio calculations.
    Phys. Rev. B, 91(16), 165303 (2015)

Conference contributions

  1. Lu, A.; Nishio, K.; Morishita, T.; Lu, Z., Hirata, A.
    Short- and medium-range order in Cu-Zr metallic glasses analyzed using the p3 code.
    The 17th internation conference on Liquid and Amorphous Metals (2019)
  2. Lu, A.; Yayama, T.; Morishita, T.; Nakanishi, T.
    Study of 2D GaN: New bilayer structures displaying buckling and their properties.
    Computational Sciences Workshop 2019 (2019)
  3. Lu, A.; Yayama, T.; Morishita, T.; Nakanishi, T.
    Uncovering new structures of bilayer GaN and their properties.
    第32回 分子シミュレーション討論会 (2018)
  4. Lu, A.; Yayama, T.; Morishita, T.; Nakanishi, T.
    New buckled structures of bilayer GaN and their properties.
    International Conference on Solid State Devices and Materials (2018)
  5. Lu, A.; Houssa, M.; Luisier, M.; Pourtois, G.
    First-principles study of the electronic and transport properties of van der Waals heterostructures.
    APS March Meeting (2018)
  6. Lu, A.; Pourtois, G.; Stokbro, K.; Thean, A.; Radu, I. P.; Houssa M.
    First-principles study of the performance degradation of 2D channel-based transistors with sub-10 nm gate lengths.
    IEEE Semiconductor Interface Specialists Conference (2015)